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| TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series s Features qWith built-in Avalanche diode qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max qIsolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) 13.0 min External Dimensions (Unit: mm) 16.90.3 8.40.2 4.00.2 10.00.2 3.30.2 4.20.2 C 0.5 2.8 A a b 1.350.15 1.350.15 +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2 a. Part Number b. Lot Number 3.90.2 0.80.2 G K 2.54 2.20.2 2.54 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Weight: Approx. 2.1g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Average on-state current RMS on-state current Surge on-state current Squared rated current and time product Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT (AV) IT (RMS) ITSM I2t VFGM VRGM PGM PG (AV) Tj Tstg VISO Ratings V 3.0 4.7 60 18 1.5 5.0 5.0 0.5 Unit V A A A A2 * sec V V W W C C V Conditions Tj=-10 to +125C, RGK=1k 50Hz Half-cycle sinewave, 180, Continuous current, Tc =92C 50Hz Half-cycle sinewave, Peak value, Non-repetitive, Tj=125C 2ms f f f t 10ms 10% 10% 50Hz, duty 50Hz 50Hz, duty -10 to +125 -40 to +125 1500 50Hz Sine wave, RMS, Terminal to case, 1min. VVDRM Rank Ratings -C 20 -F 35 -G 45 -J 80 -K 100 -L 120 -M 145 -N 170 -O 190 sElectrical Characteristics Parameter Off-state current Breakover voltage Breakover current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Thermal resistance (Tj=25C, unless otherwise specified) Symbol IDRM VBO IBO VTM VGT IGT VGT IH dv/dt Rth Ratings min typ max 1.0 100 V 0.2 15 1.4 1.0 0.2 0.1 15 40 5.0 10 Unit mA A V mA V V mA V mA V/S C/W ITM=5A VD=6V, RL=10 Conditions Tj=125C, VD=VDRM, RGK=1k Tj=25C, VD=VDRM, RGK=1k VD=VDRM, Tj=125C, RGK=1k RGK=1k, Tj=125C VD=VDRM, Tj=125C, RGK=1k, CGK=0.033F Junction to case VVBO Rank min Ratings typ max -C 27 30 33 -F 50 55 60 -G 60 65 70 -J 90 100 110 -K 115 125 135 -L 140 150 160 -M 163 175 187 -N 185 200 215 -O 210 225 240 Application example Input Reg. Overvoltage detection TFD312S Load Overcurrent detection 26 TFD312S series vT - iT Characteristics (max) 100 50 ITSM Ratings 100 Initial junction temperature Tj=125C I TSM Gate Characteristics Gate trigger voltage VGT (V) Tj=25C Tj=125C Surge on-state current ITSM (A) 20 18 16 1 cycle iT (A) vGF (V) 1 14 12 10 8 6 4 2 On-state current 10 5 60 Gate voltage 0 0 10 Gate trigger current IGT (mA) Tj=25C 80 10 ms Tj= -20C 20 40 1 0.5 0.3 1.0 2.0 3.0 4.0 20 See graph at the upper right 0 1 2 3 0 1 5 10 50 100 0 On-state voltage vT ( V ) Number of cycle Gate current iGF (A) IT(AV) - PT(AV) Characteristics 8 IT(AV) - Tc Ratings 150 Half wave, single phase : Conduction angle Average on-state power PT(AV) (W) Half wave, single phase : Conduction angle DC 7 18 Case temperature TC (C) 6 5 90 30 60 12 0 0 0 180 125 0 180 100 =30 90 120 180 60 2 1 0 0 1 2 3 4 5 6 = 3 50 25 0 0 1 2 3 4 DC 4 75 5 6 Average on-state current IT(AV) (A) Average on-state current IT(AV) (A) Pulse trigger temperature Characteristics vgt (Typical) Pulse trigger temperature Characteristics igt (Typical) trigger IGT DC gateat 25C current IH temperature Characteristics (Typical) 14 12 (RGK=1k) ) 2.0 trigger VGT DC gateat 25C voltage Holding current IH (mA) ( 1.5 Tj =- 40C -20C tw 0C 25C 50C 75C 100C 125C ) vgt 30 10 5 igt Tj =- 40C -20C tw 0C 25C 50C 75C 100C 125C 10 8 6 4 2 0 -40 vgt ( Gate trigger voltage) at Ta and tw 1.0 igt (Gate trigger current ) at Ta and tw ( 1 0.5 0.2 0.5 0.5 0.5 1 10 10 2 10 3 1 10 10 2 10 3 0 25 50 75 100 Tj= -40C 2 125 Pulse width tw (s) Pulse width tw (s) Junction temperature Tj (C) VGT temperature Characteristics (Typical) 1.0 (VD=6V, RL=10) IGT temperature Characteristics (Typical) 10 (VD=6V, RL=10) Transient thermal resistance Characteristics (Junction to case) 10 rth (C/W) Transient thermal resistance 0.8 Gate trigger current IGT (mA) 5 Gate trigger voltage VGT (V) 8 0.6 6 1 0.5 0.4 4 0.2 2 0 - 40 0 25 50 75 100 125 0 -40 0 25 50 75 100 125 0.1 1 10 10 2 10 3 10 4 Junction temperature Tj (C) Junction temperature Tj (C) t, Time (ms) 27 |
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